Molecular beam epitaxy (MBE) is a precision epitaxial growth technique that permits atomic‐scale tailoring of semiconductor structures. By directing beams of elemental or compound sources onto heated ...
A new publication from Opto-Electronic Science; DOI 10.29026/oes.2023.230005 overviews how GaN-based LED achieves high rate Wavelength division multiplexing visible light communication system with ...
Breakthrough hints at future quantum relays and distributed architectures that could underpin next-generation networks ...
A sub-class of Si spin qubits uses metal-oxide-semiconductor (MOS) quantum dots to confine the electrons, a structure that ...
Researchers have created a topological insulator that keeps its quantum properties stable even at higher temperatures, overcoming a key limit of earlier materials. (Nanowerk News) A topological ...
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