CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ:MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, ...
Everspin’s STT-MRAM devices enable enterprise infrastructure and data center providers to increase the reliability and performance of systems where high-performance data persistence is critical by ...
This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...
“Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with ...
A technical paper titled “Perspectives on field-free spin-orbit torque devices for memory and computing applications” was published by researchers at Northwestern University. “The emergence of ...
SOT-RAM, a promising type of next-generation magnetic memory, could pave the way to ultra-low-power electronics. However, scientists have identified a source of disturbance during the read operation ...
This FAQ will look at a lesser-known but commercially available RAM technology called resistive random-access memory (RRAM) ...
Magnetic random-access memory, or MRAM, uses magnetic rather than electrical charges to store data bits. While this prototype memory has so far existed only in the laboratories of IBM Corp., the ...
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